Geometry and Correlations in Low-dimensional and Topological Materials

Program Website

http://ias.ust.hk/events/202412ldm

Overview

Recent developments have revealed the importance of geometric and topological aspects of electrons in determining the correlated properties of novel materials. Such effects are further amplified in low-dimensional materials in which electrons are confined to move in a much more restricted manner. This invitation-only conference aims to assemble eminent researchers from all around the world for discussing latest developments in the field of low-dimensional and topological materials, with a focus on the how the wave function geometry and electronic correlations affect the physical properties of these materials. The conference seeks to foster scientific exchange on the latest research developments from various continents, build enduring collaborations and networks, and collectively advance our understanding of this novel class of materials.

Topics:

• Geometric effects in flat-band materials

• Topological semimetals and superconductors

• Geometry and topology in synthetic materials

• Strongly correlated electrons

Organizers

• Xi DAI
  HKUST (IAS Senior Fellow)

• Vic LAW
  HKUST

• Kin Fai MAK
  Cornell University and Max Planck Institute

• Adrian PO
  HKUST

Enquiries

For further enquiries, please contact the program secretariat at ias2024ldm@ust.hk