Recent Developments of InGaN/GaN Based Laser Diodes for Energy Efficient Solid State Lighting and Displays
Abstract
Looking into the future, we see GaN Laser Diodes based solid state lighting as impacting high brightness specialty lighting. Recently, we have demonstrated laser based white lighting with luminous efficacies of 87 lm/W, and over 1,000 lumens from a single emitter. By growing optimized nanostructures on semi-polar orientations of the GaN crystal, we have achieved continuous-wave (CW) blue lasers with output power exceeding 2 watts from a single edge emitting laser. In addition, buried tunnel junctions have been employed to achieve vertical cavity surface emitting lasers (VCSELs) in the blue spectral region. Blue and green lasers using these new semi-polar GaN materials are expected to enable new full color projection displays for cinemas, offices, and augmented reality (AR) projectors.
About the speaker
Prof. Steven DenBaars received his PhD in Electrical Engineering from the University of Southern California in 1988. From 1988-1991, Prof. DenBaars was a member of the technical staff at Hewlett-Packard's Optoelectronics Division involved in the growth and fabrication of visible LEDs. He joined the University of California, Santa Barbara as a Professor of Materials and of Electrical & Computer Engineering in 1991 and currently holds the title of Mitsubishi Distinguished Professor of Materials.
Prof. DenBaars' research interests include growth of wide-band gap semiconductors (GaN based), and their application to Blue LEDs and lasers and energy efficient solid state lighting. This research has led to over 650 scientific publications and over 67 US patents on electronic materials and devices.
Prof. DenBaars is a fellow of the US National Academy of Engineering, the US National Academy of Inventors and the Institute of Electrical and Electronics Engineers (IEEE). He received the US National Science Foundation Young Investigator Award in 1994, and the IEEE Photonics Society Aron Kressel Award in 2010.
